Author Affiliations
Abstract
1 Minzu University of China, School of Science, Beijing, China
2 Peking University, Collaborative Innovation Center of Quantum Matter, Nano-Optoelectronics Frontier Center of Ministry of Education, State Key Laboratory for Mesoscopic Physics, Department of Physics, Beijing, China
3 Shanxi University, Collaborative Innovation Center of Extreme Optics, Taiyuan, China
4 Peking University Yangtze Delta Institute of Optoelectronics, Nantong, China
As a successful case of combining deep learning with photonics, the research on optical machine learning has recently undergone rapid development. Among various optical classification frameworks, diffractive networks have been shown to have unique advantages in all-optical reasoning. As an important property of light, the orbital angular momentum (OAM) of light shows orthogonality and mode-infinity, which can enhance the ability of parallel classification in information processing. However, there have been few all-optical diffractive networks under the OAM mode encoding. Here, we report a strategy of OAM-encoded diffractive deep neural network (OAM-encoded D2NN) that encodes the spatial information of objects into the OAM spectrum of the diffracted light to perform all-optical object classification. We demonstrated three different OAM-encoded D2NNs to realize (1) single detector OAM-encoded D2NN for single task classification, (2) single detector OAM-encoded D2NN for multitask classification, and (3) multidetector OAM-encoded D2NN for repeatable multitask classification. We provide a feasible way to improve the performance of all-optical object classification and open up promising research directions for D2NN by proposing OAM-encoded D2NN.
diffractive deep neural network deep learning orbital angular momentum multiplexing optical classification 
Advanced Photonics Nexus
2023, 2(6): 066006
作者单位
摘要
1 北京星航机电装备有限公司, 北京 100074
2 上海交通大学机械与动力工程学院, 上海 200240
针对TA15钛合金材料, 建立激光弯曲成形的三维热力耦合有限元仿真模型, 得到不同加工参数下的材料温度场及变形场。通过搭建弯曲试验和测试系统, 获得了部分加工参数下钛合金板的温度场和变形数据, 并与仿真数据进行对比, 验证了数值模型的有效性。基于板材厚度方向温度和塑性应变的分布, 明确了在激光弯曲成形中的主导机制。研究了激光弯曲成形中的翘曲变形现象, 提出可用于抑制翘曲变形的来回扫描加工方法。
激光弯曲成形 有限元分析 翘曲变形 翘曲抑制 laser forming finite element model edge effect scanning strategy 
应用激光
2023, 43(4): 94
Author Affiliations
Abstract
1 Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurements of Ministry of Education, Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
2 School of Physical Science and Technology, Provincial Key Laboratory for Thin Films and Institute for Advanced Study, Soochow University, Suzhou 215006, China
3 State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China
4 State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter & Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, China
Topological photonic states have promising applications in slow light, photon sorting, and optical buffering. However, realizing such states in non-Hermitian systems has been challenging due to their complexity and elusive properties. In this work, we have experimentally realized a topological rainbow in non-Hermitian photonic crystals by controlling loss in the microwave frequency range for what we believe is the first time. We reveal that the lossy photonic crystal provides a reliable platform for the study of non-Hermitian photonics, and loss is also taken as a degree of freedom to modulate topological states, both theoretically and experimentally. This work opens a way for the construction of a non-Hermitian photonic crystal platform, will greatly promote the development of topological photonic devices, and will lay a foundation for the real-world applications.
topological rainbow non-Hermitian photonics photonic crystal slow-light effect 
Chinese Optics Letters
2023, 21(12): 123601
作者单位
摘要
1 北京大学物理学院人工微结构和介观物理国家重点实验室,北京 100871
2 南开大学物理科学学院,天津 300071
3 北京工业大学理学部信息光子技术研究所,北京 100124
4 山西大学极端光学协同创新中心,山西 太原 030006
神经网络中的非线性激活层可以改变多层网络数据间的线性变换关系,使神经网络得以进行更复杂的学习。为实现处理速度更快,能耗更低的运算,近年来光子领域的神经网络逐渐受到重视,一系列光学非线性激活函数器件应运而生。本文综述了近年来在光学神经网络中引入非线性激活函数的工作,从光学非线性函数的物理机制及其在光学神经网络中的应用出发,对该领域的工作进行了回顾;总结并讨论了光学神经网络中光学非线性激活函数器件发展所面临的挑战及变化趋势,并基于此展望了其发展前景。
非线性光学 光学神经网络 非线性激活函数 
光学学报
2023, 43(16): 1623001
Author Affiliations
Abstract
1 Zhejiang University, College of Information Science and Electronic Engineering, State Key Laboratory of Modern Optical Instrumentation, Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province, Hangzhou, China
2 Westlake University, School of Engineering, Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, Hangzhou, China
3 Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, China
4 Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China
5 Peking University, School of Physics, Frontiers Science Center for Nano-optoelectronics, State Key Laboratory for Mesoscopic Physics, Beijing, China
Optical neural networks (ONNs), enabling low latency and high parallel data processing without electromagnetic interference, have become a viable player for fast and energy-efficient processing and calculation to meet the increasing demand for hash rate. Photonic memories employing nonvolatile phase-change materials could achieve zero static power consumption, low thermal cross talk, large-scale, and high-energy-efficient photonic neural networks. Nevertheless, the switching speed and dynamic energy consumption of phase-change material-based photonic memories make them inapplicable for in situ training. Here, by integrating a patch of phase change thin film with a PIN-diode-embedded microring resonator, a bifunctional photonic memory enabling both 5-bit storage and nanoseconds volatile modulation was demonstrated. For the first time, a concept is presented for electrically programmable phase-change material-driven photonic memory integrated with nanosecond modulation to allow fast in situ training and zero static power consumption data processing in ONNs. ONNs with an optical convolution kernel constructed by our photonic memory theoretically achieved an accuracy of predictions higher than 95% when tested by the MNIST handwritten digit database. This provides a feasible solution to constructing large-scale nonvolatile ONNs with high-speed in situ training capability.
phase-change materials optical neural networks photonic memory silicon photonics reconfigurable photonics 
Advanced Photonics
2023, 5(4): 046004
Author Affiliations
Abstract
The basic indexes of all-optical integrated photonic circuits include high-density integration, ultrafast response and ultra-low energy consumption. Traditional methods mainly adopt conventional micro/nano-structures. The overall size of the circuit is large, usually reaches hundreds of microns. Besides, it is difficult to balance the ultrafast response and ultra-low energy consumption problem, and the crosstalk between two traditional devices is difficult to overcome. Here, we propose and experimentally demonstrate an approach based on inverse design method to realize a high-density, ultrafast and ultra-low energy consumption integrated photonic circuit with two all-optical switches controlling the input states of an all-optical XOR logic gate. The feature size of the whole circuit is only 2.5 μm × 7 μm, and that of a single device is 2 μm × 2 μm. The distance between two adjacent devices is as small as 1.5 μm, within wavelength magnitude scale. Theoretical response time of the circuit is 150 fs, and the threshold energy is within 10 fJ/bit. We have also considered the crosstalk problem. The circuit also realizes a function of identifying two-digit logic signal results. Our work provides a new idea for the design of ultrafast, ultra-low energy consumption all-optical devices and the implementation of high-density photonic integrated circuits.The basic indexes of all-optical integrated photonic circuits include high-density integration, ultrafast response and ultra-low energy consumption. Traditional methods mainly adopt conventional micro/nano-structures. The overall size of the circuit is large, usually reaches hundreds of microns. Besides, it is difficult to balance the ultrafast response and ultra-low energy consumption problem, and the crosstalk between two traditional devices is difficult to overcome. Here, we propose and experimentally demonstrate an approach based on inverse design method to realize a high-density, ultrafast and ultra-low energy consumption integrated photonic circuit with two all-optical switches controlling the input states of an all-optical XOR logic gate. The feature size of the whole circuit is only 2.5 μm × 7 μm, and that of a single device is 2 μm × 2 μm. The distance between two adjacent devices is as small as 1.5 μm, within wavelength magnitude scale. Theoretical response time of the circuit is 150 fs, and the threshold energy is within 10 fJ/bit. We have also considered the crosstalk problem. The circuit also realizes a function of identifying two-digit logic signal results. Our work provides a new idea for the design of ultrafast, ultra-low energy consumption all-optical devices and the implementation of high-density photonic integrated circuits.
all-optical integrated photonic circuit inverse design all-optical switch all-optical XOR logic gate 
Opto-Electronic Advances
2022, 5(10): 210061
Author Affiliations
Abstract
1 State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter & Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, China
2 Department of Physics and Research Center OPTIMAS, University of Kaiserslautern, Kaiserslautern 67663, Germany
3 College of Physics Science & Technology, Hebei University, Baoding 071002, China
4 Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
The two-dimensional electron gas (2DEG) generated at the LaAlO3/SrTiO3 interface has been in the focus of oxides research since its first discovery. Although oxygen vacancies play an important role in the generation of the insulator-to-metal transition of the SrTiO3 bare surface, their contribution at the LaAlO3/SrTiO3 interface remains unclear. In this work, we investigated a LaAlO3/SrTiO3 heterostructure with regional distribution of defect-based localized polar sites at the interface. Using static and time-resolved threshold photoemission electron microscopy, we prove that oxygen vacancies are induced near those polar sites, resulting in the increase of carrier density of the 2DEG states. In addition, oxygen-related surface states were uncovered, which we attributed to the release of lattice oxygen during the formation of oxygen vacancies. Such effects are mainly found spatially located around the defect sites at the buried interface, while other regions remain unaffected. Our results confirm that the itinerant electrons induced by oxygen vacancies can coexist with the charge transfer mechanism in the LaAlO3/SrTiO3 heterostructure, together leading to the formation of the metallic interface. These observations provide fundamental insights into the nature of LaAlO3/SrTiO3 interface based 2DEG and unique perspectives for potential applications.
two-dimensional electron gas photoemission electron microscopy strontium titanate defect states 
Opto-Electronic Science
2022, 1(7): 210011
Meng Li 1,2†Chu Li 1,2†Yang Chen 3Lan-Tian Feng 3[ ... ]Yan Li 1,2,4,5,7,*
Author Affiliations
Abstract
1 State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
2 Frontiers Science Center for Nano-Optoelectronics, Peking University, Beijing 100871, China
3 Key Laboratory of Quantum Information, CAS University of Science and Technology of China, Hefei 230026, China
4 Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
5 Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226010, China
6 e-mail: renxf@ustc.edu.cn
7 e-mail: li@pku.edu.cn
The quantum Toffoli gate is one of the most important three-qubit gates, but it is challenging to construct a chip according to the complicated traditional circuit. Using the optimized 3D configuration with an overpass waveguide to reduce the circuit complexity, we successfully fabricate an on-chip path encoded photonic quantum Toffoli gate enabled by the 3D capability of the femtosecond laser direct writing (FLDW) for the first time to our knowledge, whose truth-table fidelity is higher than 85.5%. Furthermore, a path encoded four-qubit controlled-controlled-controlled NOT gate is written to confirm the scalability of this resource-saving technique. This work paves the way for the FLDW of more complex and powerful photonic quantum computation chips.
Photonics Research
2022, 10(7): 07001533
Author Affiliations
Abstract
The rapid development of information technology has fueled an ever-increasing demand for ultrafast and ultralow-energy-consumption computing. Existing computing instruments are pre-dominantly electronic processors, which use electrons as information carriers and possess von Neumann architecture featured by physical separation of storage and processing. The scaling of computing speed is limited not only by data transfer between memory and processing units, but also by RC delay associated with integrated circuits. Moreover, excessive heating due to Ohmic losses is becoming a severe bottleneck for both speed and power consumption scaling. Using photons as information carriers is a promising alternative. Owing to the weak third-order optical nonlinearity of conventional materials, building integrated photonic computing chips under traditional von Neumann architecture has been a challenge. Here, we report a new all-optical computing framework to realize ultrafast and ultralow-energy-consumption all-optical computing based on convolutional neural networks. The device is constructed from cascaded silicon Y-shaped waveguides with side-coupled silicon waveguide segments which we termed “weight modulators” to enable complete phase and amplitude control in each waveguide branch. The generic device concept can be used for equation solving, multifunctional logic operations as well as many other mathematical operations. Multiple computing functions including transcendental equation solvers, multifarious logic gate operators, and half-adders were experimentally demonstrated to validate the all-optical computing performances. The time-of-flight of light through the network structure corresponds to an ultrafast computing time of the order of several picoseconds with an ultralow energy consumption of dozens of femtojoules per bit. Our approach can be further expanded to fulfill other complex computing tasks based on non-von Neumann architectures and thus paves a new way for on-chip all-optical computing.
Opto-Electronic Advances
2021, 4(11): 200060-1
作者单位
摘要
北京大学 物理学院 人工微结构和介观物理国家重点实验室,北京100871
随着超快光学的发展和对以Bi2Te3为代表的拓扑绝缘体材料研究的深入,近几年,将拓扑绝缘体薄膜应用于超快光器件的研究方向发展迅速并发表了一系列研究成果,本文综述了近年来基于拓扑绝缘体材料的超快激光及光器件的研究。从材料结构及制备方法出发,介绍了其独特的光学及光电特性,总结了其在超快激光及光器件中的应用研究进展,回顾和讨论了这一领域的成就和挑战,并对将拓扑绝缘体薄膜材料应用于超快光器件的进一步研究进行了展望。
拓扑绝缘体材料 Bi2Te3薄膜 宽频强非线性效应 饱和吸收体 超快光器件 Topological insulator materials Bi2Te3 thin film Broadband strong nonlinear effect Saturated absorber Ultrafast optical devices 
光子学报
2021, 50(8): 0850210

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